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quarterly reliability report for t0247 / t0220 products manufactured at irgb igbt / copack issue.3. october 1997 igbt / copack quarterly reliability report page 1 of 35
contents 1 introduction 2 reliability information 3 environmental test results 4 environmental test conditions / schematics 5 device package and frequency listings igbt / copack quarterly reliability report page 2 of 35
introduction reliability engineering _____________________________________ quality manager _____________________________________ date _____________________________________ the reliability report is a summary of the test data collated since the implementation of the reliability programme. this report will be periodically updated typically on a quarterly basis. future publications of this report will also include as appropriate additional information to assist the user in the interpretation of the data provided. the programme covers only igbt / copack manufactured products at irgb, holland road, oxted. the reliability data provided in this report are for the package types to247 and to220. further information regarding reliability data is available in the ir data book igbt-3, pages e-65-e-72. this also, is available from the oxted office. igbt / copack quarterly reliability report page 3 of 35
section 2 reliability information igbt / copack quarterly reliability report page 4 of 35
fit rate / equivalent device hours l = proportion allowed system failures x 1 x 10 9 = fits time period no. of devices in the case of the example, l = 0.01 failures x 1 = 10 9 = 14 fits 720 hours 1000 devices or 14 fits or 14 failures per 10 9 devices hours. traditionally, reliability results have been presented in terms of mean-time-to-failure or median-time-to-failure. while these results have their value, they do not necessarily tell the designer what he most needs to know. for example, the median- time-to-failure tells the engineer how long it will take for half a particular lot of devices to fail. clearly no designer wishes to have a 50% failure rate within a reasonable equipment lifetime. of greater interest, therefore, is the time to failure of a much smaller percentage of devices say 1% or 0.1%. for example, in a given application one failure per hundred units over five years is an acceptable failure rate for the equipment, the designer knows that time to accumulate 1% failure of that components per unit, then no more than 0.1% of the components may fail in five years. therefore, the igbt / copack reliability or operating-life data is presented in terms of the time it will take to produce a prescribed number of failures under given operating conditions. to obtain a perspective of failure rate from an example, let us assume that an electronic system contains 1,000 semiconductor devices, and that it can tolerate 1% system failures per month. the equation for the device failure is: igbt / copack quarterly reliability report page 5 of 35
using igbt reliability information classic bathtub curve for failure rate of solid state devices l ( t ) infant failures wearout failures random failures log time reliability is the probability that a semiconductor device will perform its specified function in a given environment for a specified period of time. reliability is quality over time & environmental conditions. reliability can be defined as a probability of failure-free performance of a required function, under a specified environment, for a given period of time. the reliability of semiconductors has been extensively studied and the data generated from these works is widely used in industry to estimate the probabilities of system lifetimes. the reliability of a specific semiconductor device is unique to the technology process used in fabrication and to the external stress applied to the device. in order to understand the reliability of specific product like the igbt it is useful to determine the failure rate associated with each environmental stress that igbt's encounter. the values reported in this report are at a 60% upper confidence limit and the equivalent device hours at state of working temperature of 90c. it has been shown that the failure rate of semiconductors in general. when followed for a long period of time, exhibits what has been called a "bathtub curve" when plotted against time for a given set of environmental conditions. t log failure igbt / copack quarterly reliability report page 6 of 35
the igbt structure ir g 4 b c 4 0 s d diode international rectifier speed designator igbt s standard generation modifier f fast voltage designator die size m short cicuit fast package designator c 600v e 800v u ultrafast b t0220 f 900v g 1000v k short circuit ultrafast p t0247 h 1200v basic igbt structure the silicon cross-section of an insulated gate bipolar transistor (igbt), the terminal called collector is, actually, the emitter of the pnp. in spite of its similarity to the cross-section of a power mosfet, operating of the two transistors is fundamentally different, the igbt being a minority carrier device. except for the p + substrate is virtually identical to that of a power mosfet, both devices share a similar polysilicon gate structure and p wells with n + source contacts. in both devices the n-type material under the p wells is sized in thickness and reistivity to sustain the full voltage rating of the device. however, in spite of the many similarities, he physical operation of the igbt is closer to that of a bipolar transistor than to that of a power mosfet. this is due to the p + substrate which is responsible for the minority carrier injection into the n regtion and the resulting conductivity modulation, a significant share of the conduction losses occur in the n region, typically 70% in a 500v device. the part number itself contains in coded form the key features of the igbt. an explanation of the nomenclature in contained below. igbt / copack quarterly reliability report page 7 of 35
section 3 environmental test results igbt / copack quarterly reliability report page 8 of 35
high temperature reverse bias (htrb) t0247 package junction temperature : tj = as specified below applied bias: vge = 0v vce = 80% of maximum rated bvces n channel mid frequency ( fast ) equivalent failure rate @ device date temp voltage qty actual failures dev-hrs 90c & 60% ucl type code max test @ 90c time # mode fits (deg c) (v) (hours) (note b) (note a) irgpc30fd2 9344 150 600 20 1080 0 2.01e+06 456 irgpc50fd2 9237 150 600 59 2008 0 1.10e+07 83 totals 79 3088 0 1.30e+07 70 n channel high frequency ( ultra-fast ) equivalent failure rate @ device date temp voltage qty actual failures dev-hrs 90c & 60% ucl type code max test @ 90c time # mode fits (deg c) (v) (hours) (note b) (note a) irgpc40u 9538 150 600 20 2008 0 3.73e+06 245 irgpc40u 9620 150 600 20 2008 0 3.73e+06 245 irgpc40ud2 9237 150 600 20 1008 0 1.87e+06 489 irg4pc40ud2 9643 150 600 20 2030 0 3.78e+06 243 irgpc50ud2 9346 150 600 20 1080 0 2.01e+06 456 irgph60ud2 9450 150 1200 10 1008 0 9.37e+05 977 totals 110 9142 0 1.61e+07 57 notes a. one fit represents one failure in one billion (1.0e+09) hours. b. failure modes: igbt / copack quarterly reliability report page 9 of 35
high temperature reverse bias (htrb) t0220 package junction temperature: tj = as specified below applied bias: vge = 0v vce = 80% of maximum rated bvces n channel low frequency ( standard ) equivalent failure rate @ device date temp voltage qty actual failures dev-hrs 90c & 60% ucl type code max test @ 90c time # mode fits (deg c) (v) (hours) (note b) (note a) irgbc20s 9544 150 600 20 2008 0 3.73e+06 245 irgbc40s 9606 150 600 20 2008 0 3.73e+06 245 totals 40 4016 0 7.47e+06 123 n channel mid frequency ( fast ) equivalent failure rate @ device date temp voltage qty actual failures dev-hrs 90c & 60% ucl type code max test @ 90c time # mode fits (deg c) (v) (hours) (note b) (note a) irgbc30f 9537 150 600 20 2008 0 3.73e+06 245 irgnc30fd2 9640 150 600 20 2007 0 3.73e+06 245 irgbf30f 9613 150 900 20 2008 0 3.73e+06 245 totals 60 6023 0 1.12e+07 82 notes a. one fit represents one failure in one billion (1.0e+09) hours. b. failure modes: igbt / copack quarterly reliability report page 10 of 35
high temperature reverse bias (htrb) t0220 package junction temperature: tj = as specified below applied bias: vge = 0v vce = 80% of maximum rated bvces n channel high frequency ( ultra-fast ) equivalent failure rate @ device date temp voltage qty actual failures dev-hrs 90c & 60% ucl type code max test @ 90c time # mode fits (deg c) (v) (hours) (note b) (note a) irgbc20k 9613 150 600 20 2008 0 3.73e+06 245 irgbc30u 9605 150 600 20 2008 0 3.73e+06 245 irgb440u 9643 150 400 20 2008 0 3.73e+06 245 totals 60 6024 0 1.12e+07 82 notes a. one fit represents one failure in one billion (1.0e+09) hours. b. failure modes: igbt / copack quarterly reliability report page 11 of 35
high temperature gate bias (htgb) junction temperature: tj = as specified below vc = ve = 0v vg = as specified n channel mid frequency ( fast ) failure rate @ device date temp gate qty actual failures dev-hrs 90c & 60% ucl type code bias test @ 90c time # mode fits (deg c) (v) (hours) (note b) (note a) irgpf30f 9642 150 20 20 2007 0 2.46e+05 3724 irgpc50fd2 9237 150 20 20 2088 0 2.56e+05 3579 totals 40 4095 0 5.02e+05 1825 n channel high frequency ( ultra-fast ) equivalent failure rate @ device date temp gate qty actual failures dev-hrs 90c & 60% ucl type code bias test @ 90c time # mode fits (deg c) (v) (hours) (note b) (note a) irgpc40u 9538 150 20 20 2008 0 2.46e+05 3722 irgpc40u 9620 150 20 20 2008 0 2.46e+05 3722 irg4pc50u 9721 150 20 20 2213 0 2.71e+05 3377 irg4pc40ud2 9643 150 20 20 2039 0 2.50e+05 3665 totals 80 8268 0 1.01e+06 904 notes a. one fit represents one failure in one billion (1.0e+09) hours. b. failure modes: igbt / copack quarterly reliability report page 12 of 35
high temperature gate bias (htgb) junction temperature: tj = as specified below vc = ve = 0v vg = as specified n channel low frequency ( standard ) failure rate @ device temp gate actual failures dev-hrs type bias test time # fits (deg c) (hours) (note b) irgbc20s 9544 20 20 0 2.46e+05 irgbc40s 9605 20 20 0 2.46e+05 totals 40 0 4.92e+05 n channel mid frequency ( fast ) equivalent failure rate @ date temp qty actual dev-hrs 90c & 60% ucl type bias @ 90c time mode fits (v) (hours) (note a) irgbc30f 150 20 2008 0 3722 irgbc30fd2 150 20 2095 0 3567 irgbc30fd2 150 20 2007 0 3724 irgbf30f 150 20 2008 0 3722 totals 8118 0 921 notes b. failure modes: i quarterly reliability report
high temperature gate bias (htgb) t0220 package junction temperature: tj = as specified below applied bias: vc = ve = 0v vg = as specified n channel high frequency ( ultra-fast ) equivalent failure rate @ device date temp gate qty actual dev-hrs type code bias test @ 90c time # mode fits (deg c) (v) (hours) 9613 150 20 20 2008 0 3722 9605 150 20 20 2008 0 3722 9641 150 20 20 2007 0 3724 9643 150 20 20 2054 0 3639 totals 80 8077 0 925 notes a. one fit represents one failure in one billion (1.0e+09) hours. b. failure modes: igbt / copack quarterly reliability report page 14 of 35
temperature & humidity (thb) t0247 package junction temperature: 85c relative humidity: 85% rh applied bias: vge = 0v vce = as specified n channel mid frequency ( fast ) device date collector qty actual failures type code voltage test time # mode (v) (hours) (note b) irgpf30f 9642 100 20 2000 0 totals 20 2000 0 n channel high frequency ( ultra-fast ) device date collector qty actual failures type code voltage test time # mode (v) (hours) (note b) irgpc40u 9538 500 20 1504 3 1 irgpc40u 9620 500 20 1504 4 1 irg4pc40ud2 9643 100 20 2051 0 irgph60ud2 9450 500 10 1008 0 totals 70 6067 7 notes b. failure modes: 1. 3 devices failed @ 1504hrs 85/85 and 4 devices failed @ 1552 hrs 85/85 all the failures were due to termination structure corrosion, caused by moisture ingression. igbt / copack quarterly reliability report page 15 of 35
temperature & humidity (thb) t0220 package junction temperature: 85c relative humidity: 85% rh applied bias: vge = 0v vce = as specified n channel low frequency ( standard ) device date collector qty actual failures type code voltage test time # mode (v) (hours) (note b) irgbc20s 9544 500 20 1008 0 irgbc30s 9643 100 20 2051 0 irgbc40s 9606 500 20 1008 0 totals 60 4067 0 n channel mid frequency ( fast ) device date collector qty actual failures type code voltage test time # mode (v) (hours) (note b) irgbc30f 9537 600 20 1008 1 1 irgbf30f 9613 900 20 1008 0 irgbc30fd2 9640 100 20 2051 0 totals 60 4067 1 notes b. failure modes: 1 1 device failed @ 1008hrs 85/85 it was due to termination structure corrosion, caused by moisture ingression. igbt / copack quarterly reliability report page 16 of 35
temperature & humidity (thb) t0220 package junction temperature: 85c relative humidity: 85% rh applied bias: vge = 0v vce = as specified n channel high frequency ( ultra-fast ) device date collector qty actual failures type code voltage test time # mode (v) (hours) (note b) irg4bc30u 9641 100 20 2000 0 irgb440u 9643 100 20 2051 0 irgbc20k 9613 500 20 1008 3 1 totals 60 5059 3 notes b. failure modes: 1 3 devices failed @ 1008hrs 85/85 all the failures were due to termination structure corrosion, caused by moisture ingression. igbt / copack quarterly reliability report page 17 of 35
temperature cycling (t/c) unbiased t0247 package temperature cycle: tmin = - 55c, tmax = + 150c cycle time: 25 minutes bias none n channel mid / high frequency device date qty actual failures type code cycles # mode (note b) irgpc30fd2 9344 39 1000 0 irgpc50fd2 9237 80 2174 0 irgpc40u 9538 20 2008 0 irgpc40u 9620 20 2055 0 irgpc40ud2 9237 40 1087 0 irg4pc40ud2 9643 20 1496 0 irg4pc50u 9721 20 2086 0 irgpc50ud2 9346 38 1000 0 irgpf30f 9642 20 2015 0 irgph60ud2 9450 10 1044 0 totals 307 15965 0 notes b. failure modes: igbt / copack quarterly reliability report page 18 of 35
temperature cycling (t/c) unbiased t0220 package temperatre cycle: tmin = - 55c, tmax = + 150c cycle time 25 minutes bias none n channel low / mid / high frequency device date qty actual failures type code cycles # mode (note b) irgbc20s 9544 20 2062 0 irgbc40s 9606 20 2008 0 irgbc30s 9643 20 2017 0 irgbc30f 9537 20 2008 0 irgbf30f 9613 20 2032 0 irgbc20k 9613 20 2032 0 irgbc30u 9605 20 2008 0 irg4bc30u 9614 20 2015 0 irgb440u 9643 20 2107 0 irgbc30fd2 9640 20 2077 0 irgbc30fd2 9643 20 2043 0 totals 220 22409 0 notes b. failure modes: igbt / copack quarterly reliability report page 19 of 35
power cycling (p/c) unbiased t0247 package bias: set to give d t = 100c temperature: tj = d 100c duration: 10000 cycles test points: 2500, 5000, 10000 nominal n channel high frequency ( ultra-fast ) failures device date qty actual type code (hours) # mode (note b) irgpc40u 9620 20 10000 0 totals 20 10000 0 notes b. failure modes: igbt / copack quarterly reliability report page 20 of 35
accelerated moisture resistance (a/c) unbiased t0247 package pressure: 15 ibs psig temperature: 121c humidity: 100% bias: none n channel mid / high frequency failures device date qty actual type code (hours) # mode (note b) irgpf30f 9642 20 96 0 irgpc40u 9538 20 96 0 irgpc40u 9620 20 96 0 irg4pc40ud2 9643 20 96 0 irg4pc50u 9721 20 96 0 totals 100 480 0 notes b. failure modes: igbt / copack quarterly reliability report page 21 of 35
accelerated moisture resistance (a/c) unbiased t0220 package pressure: 15 ibs psig temperature: 121c humidity: 100% bias: none n channel low / mid / high frequency failures device date qty actual type code (hours) # mode (note b) irgbc20s 9544 20 96 0 irgbc30s 9643 20 96 0 irgbc40s 9606 20 96 0 irgbc30f 9537 20 96 0 irgbf30f 9613 20 96 0 irgbc20k 9613 20 96 0 irgbc30u 9606 20 96 0 totals 140 672 0 notes b. failure modes: igbt / copack quarterly reliability report page 22 of 35
section 4 environmental test conditions / schematics i gbt / copack quarterly reliability report page 23 of 35
high temperature reverse bias (htrb) test circuit conditions bias: vce = as required temperature: tmax duration: 2000 hours nominal dut test points: 168, 500, 1000, dc 1500, 2000, hours nominal bias d = diode for copack devices only purpose failure modes sensitive parameters v (br)ces, i ces, i ges, v ge(th) high temperature reverse bias (htrb) burn-in is to stress the devices with the applied voltage in the blocking mode while elevating the junction temperature. this will accelerate any blocking voltage degradation process. d the primary failure mode for htrb stress is a gradual degradation of the breakdown characteristics or v (br)ces . this degradation has been attributed to the presence of foreign materials and polar/ionic contaminants. these materials, migrating under application of electric field at high temperature, can perturb the electric field termination structure. extreme care must be exercised in the course of a long term test to avoid potential hazards such as electrostatic discharge or electrical overstress to the gate during test. failures arising from this abuse can be virtually indistinguishable from true htrb failures which results from the actual stress test. igbt / copack quarterly reliability report page 24 of 35
high temperature gate bias (htgb) test circuit conditions dut bias: vge = as required temperature: tmax duration: 2000 hours nominal test points: 168, 500, 1000, dc 1500, 2000 hours nominal. bias d = diode for copack devices only purpose failure modes sensitive parameters i ces, v ge(th) the purpose of high temperature gate bias is to stress the devices with the applied bias to the gate while at elevated junction temperature to accelerate time dependent dielectric breakdown of the gate structure. d the primary failure modes for long term gate stress is a rupture of the gate oxide, causing either a resistive short between gate-to-emitter or gate-to-collector or what appears to be a low breakdown diode between the gate and source. the oxide breakdown has been attributed to the degradation in time of existing defects in the thermally grown oxide. these defects can take form of localized thickness variations, structural anomalies or the presence of sub-micron particulate, within the oxide. as with htrb, extreme care must be exercised in the course of a long term test to avoid potential hazards such as electrostatic discharge or electrical overstress to the gate during test. failures arising from this abuse are virtually indistinguishable from true oxide breakdown which result from the actual stress test. igbt / copack quarterly reliability report page 25 of 35
temperature & humidity (thb) test circuit conditions bias: vce = 100% of maximum rated v (br)ces up to 500v: 500v for all devices with rated v (br)ces dut greater than 500v * dc temperature: 85c bias relative humidity: 85% duration: 2000 hours nominal test points: 168, 500, 1000, 1500, 2000 hours nominal. * devices manufactured since week code 9640 the applied bias: v (br)ces = vmax or 100v which ever the lesser d = diode for copack devices only purpose failure modes sensitive parameters v (br)ces, v ce(on) temperature and humidity bias testing for non-hermetic packages is to subject the devices to extremes of temperature and humidity to examine the ability of the package to withstand the deleterious effect of the humid environment. d there are two primary failure modes which have been observed. the first failure mode comes about as a result of the ingression of water molecules into the active area on the surface of the die. once sufficient water has accumulated in the region of the electric field termination structure on the die, the perturbation of that field begins to degrade the breakdown characteristics of the device. the second failure mode that has been observed is due to cathodic corrosion of the aluminum emitter bonding pad. as with first failure mode, water will ingress to the top of the die. there, in the presence of applied bias, an electric current through the few monolayers of water will begin to cause the bond pad to dissolve. eventually. the corrosion will proceed to the point where the current capability of the device is increased and become unstable. the dominance of either of these failure modes is basically determined by the amount of bias present during test. under low bias conditions, the corrosion proceeds slowly, so the first failure mode will proceed very rapidly and the device will fail due to on-resistance before the breakdown characteristics can degrade.
temperature cycling (t/c) unbiased conditions temperature: tmin = - 55c tmax = + 150c bias: unbiased duration: 2000 cycles test points: 250,500,1000,1500,2000 nominal purpose failure modes sensitive parameters i ces, v (br)ces, r q jc, v ce(on) temperature cycling simulates the extremes of thermal stresses which devices will encounter in the actual circuit applications in combination with potentially extreme operating ambient temperatures. some equipment is destined to be used in extreme environments, and subject to daily temperature cycles. the primary failure mode for temperature cycling is a thermal fatigue of the silicon / metal interfaces and metal / metal interfaces. the fatigue results from thermomechanical stresses due to heating and cooling and will cause electrical or thermal performance to degrade. if the degradation occurs at the header / die interface, then the thermal impedance, r q jc will begin to increase well before any electrical effect is seen. if the degradation occurs at the wire bond / die interface or the wire bond / bond post interface, then on resistance, v ce(on) , will slowly increase or become unstable with time. the thermal impedance, when measured during this time, may appear to decrease or change erratically. the mechanical stresses from the temperature can also propagate fractures in the silicon when the die is thermally mismatched to the solder / heat sink system. these fractures will manifest themselves in the form of shorted gates or degraded breakdown characteristics ( v (br)ces ) igbt / copack quarterly reliability report page 27 of 35
power cycling (p/c) unbiased test circuit conditions bias set to give d t = 100c temperature tj = d 100c d dc duration 10000 cycles bias test points 2500, 5000, 7500, 10000 nominal input bias d = diode for copack devices only purpose failure modes sensitive parameters i ces , v (br)ces , r q q jc , v ce(on) the purpose of power cycling is to simulate the thermal and current pulsing stresses which devices will encounter in actual circuit applications when either the equipment is turned on and off or power is applied to the device in short bursts interspersed with quiescent, low power periods. the simulation is achieved by the on/off application of power to each device while they are in the active linear region. the primary failure mode for power cycling is a thermal fatigue of the silicon/metal interfaces and metal/metal interfaces. the fatigue, due to the thermomechanical stresses from the heating and cooling, will cause electrical or thermal performance or degrade. if the degradation occurs at the header/die interface, then the thermal impedance r q q jc , will begin to increase well before any electrical effect is seen. if the degradation occurs at the wire bond/die interface or the wire bond/post interface, then on resistance, v ce(on) , will slowly increase or become unstable with time. the thermal impedance, when measured during this time may appear to decrease or change erratically. the mechanical stresses from the application of power can also propagate fractures in the silicon when the die is thermally mismatched to the solder/heat sink system. these fractures will manifest themselves in the form of shorted gates or degraded breakdown characteristics ( v (br)ces ). igbt / copack quarterly reliability report page 28 of 35
acceleratedmoisture resistance (a/c)unbiased conditions temperature: 121c pressure: 15ibs psig bias: none duration: 96 hours nominal test points: 96 hours purpose failure modes sensitive parameters v (br)ces, v ce(on) accelerated moisture resistance test is performed to evaluate the moisture resistance of non-hermetic packages. severe conditions of pressure, humidity and temperature are applied that accelerate the penetration of moisture through the interface of the encapsulant and the conductors that pass through it. there are two failure modes which have been observed. the first mode, degradation of the breakdown characteristics of the devices, can occur. the second failure mode that has been observed is due to cathodic corrosion of aluminum emitter bonding pad. water will ingress to the top of the die. it is possible for contaminants to work their way into the active area of the device while under pressure in the presence of water. for that reason, the devices and test board are cleaned prior to use. then, throughout the course of the testing, the parts and the test boards are never brought into contact with human contaminant. igbt / copack quarterly reliability report page 29 of 35
section 5 device package and frequency listings igbt / copack quarterly reliability report page 30 of 35
t0247 generation iii package part number channel voltage speed hex size frequency family irgpc30s n 600 standard 3 low frequency irgpc40s n 600 standard 4 low frequency irgpc50s n 600 standard 5 low frequency irgph20s n 1200 standard 2 low frequency irgph30s n 1200 standard 3 low frequency irgph40s n 1200 standard 4 low frequency irgph50s n 1200 standard 5 low frequency irgpc20f n 600 fast 2 mid frequency irgpc20m n 600 short circuit rated fast 2 mid frequency irgpc20md2 n 600 short circuit rated fast 2 mid frequency irgpc30f n 600 fast 3 mid frequency irgpc30m n 600 short circuit rated fast 3 mid frequency irgpc30fd2 n 600 fast 3 mid frequency irgpc30md2 n 600 short circuit rated fast 3 mid frequency irgpc40f n 600 fast 4 mid frequency irgpc40m n 600 short circuit rated fast 4 mid frequency irgpc40fd2 n 600 fast 4 mid frequency irgpc40md2 n 600 short circuit rated fast 4 mid frequency irgpc50f n 600 fast 5 mid frequency irgpc50m n 600 short circuit rated fast 5 mid frequency irgpc50fd2 n 600 fast 5 mid frequency irgpc50md2 n 600 short circuit rated fast 5 mid frequency irgpf20f n 900 fast 2 mid frequency irgpf30f n 900 fast 3 mid frequency irgpf40f n 900 fast 4 mid frequency irgpf50f n 900 fast 5 mid frequency irgph20m n 1200 short circuit rated fast 2 mid frequency irgph30md2 n 1200 short circuit rated fast 3 mid frequency irgph40f n 1200 fast 4 mid frequency irgph40m n 1200 short circuit rated fast 4 mid frequency irgph40fd2 n 1200 fast 4 mid frequency irgph40md2 n 1200 short circuit rated fast 4 mid frequency irgph50f n 1200 fast 5 mid frequency irgph50m n 1200 short circuit rated fast 5 mid frequency irgph50fd2 n 1200 fast 5 mid frequency irgph50md2 n 1200 short circuit rated fast 5 mid frequency igbt / copack quarterly reliability report page 32 of 35
irgp420u n 500 ultra-fast 2 high frequency irgp430u n 500 ultra-fast 3 high frequency irgp440u n 500 ultra-fast 4 high frequency irgp440ud2 n 500 ultra-fast 4 high frequency irgp450u n 500 ultra-fast 5 high frequency irgp450ud2 n 500 ultra-fast 5 high frequency irgpc20k n 600 short circuit rated ultra-fast 2 high frequency irgpc20u n 600 ultra-fast 2 high frequency irgpc20kd2 n 600 short circuit rated ultra-fast 2 high frequency irgpc30k n 600 short circuit rated ultra-fast 3 high frequency irgpc30u n 600 ultra-fast 3 high frequency irgpc30kd2 n 600 short circuit rated ultra-fast 3 high frequency irgpc30ud2 n 600 ultra-fast 3 high frequency irgpc40k n 600 short circuit rated ultra-fast 4 high frequency irgpc40u n 600 ultra-fast 4 high frequency irgpc40kd2 n 600 short circuit rated ultra-fast 4 high frequency irgpc40ud2 n 600 ultra-fast 4 high frequency irgpc50k n 600 short circuit rated ultra-fast 5 high frequency irgpc50u n 600 ultra-fast 5 high frequency irgpc50kd2 n 600 short circuit rated ultra-fast 5 high frequency irgpc50ud2 n 600 ultra-fast 5 high frequency irgph50k n 1200 short circuit rated ultra-fast 5 high frequency irgph50kd2 n 1200 short circuit rated ultra-fast 5 high frequency igbt / copack quarterly reliability report page 32 of 35
t0247 generation iv package part number channel voltage speed hex size frequency family irg4p254s n 250 standard 5 low frequency irg4pc30s n 600 standard 3 low frequency irg4pc40s n 600 standard 4 low frequency irg4pc50s n 600 standard 5 low frequency irg4pc30f n 600 fast 3 mid frequency irg4pc30fd n 600 fast 3 mid frequency irg4pc40f n 600 fast 4 mid frequency irg4pc40fd n 600 fast 4 mid frequency irg4pc50f n 600 fast 5 mid frequency irg4pc50fd n 600 fast 5 mid frequency irg4pc30u n 600 ultra-fast 3 high frequency irg4pc30ud n 600 ultra-fast 3 high frequency irg4pc30k n 600 short circuit rated ultra-fast 3 high frequency irg4pc40u n 600 ultra-fast 4 high frequency irg4pc40ud n 600 ultra-fast 4 high frequency irg4pc40k n 600 short circuit rated ultra-fast 4 high frequency irg4pc40kd n 600 short circuit rated ultra-fast 4 high frequency irg4pc50u n 600 ultra-fast 5 high frequency irg4pc50ud n 600 ultra-fast 5 high frequency irg4ph50u n 1200 ultra-fast 5 high frequency irg4ph50ud n 1200 ultra-fast 5 high frequency igbt / copack quarterly reliability report page 33 of 35
t0220 generation iii package part number channel voltage speed hex size frequency family irgbc20s n 600 standard 2 low frequency irgbc30s n 600 standard 3 low frequency irgbc40s n 600 standard 4 low frequency irgbc20f n 600 fast 2 mid frequency irgbc20m n 600 short circuit rated fast 2 mid frequency irgbc20fd2 n 600 fast 2 mid frequency irgbc20md2 n 600 short circuit rated fast 2 mid frequency irgbc30f n 600 fast 3 mid frequency irgbc30m n 600 short circuit rated fast 3 mid frequency irgbc30fd2 n 600 fast 3 mid frequency irgbc30md2 n 600 short circuit rated fast 3 mid frequency irgbc40f n 600 fast 4 mid frequency irgbc40m n 600 short circuit rated fast 4 mid frequency irgbf20f n 900 fast 2 mid frequency irgbf30f n 900 fast 3 mid frequency irgb420u n 500 ultra-fast 2 high frequency irgb420ud2 n 500 ultra-fast 2 high frequency irgb430u n 500 ultra-fast 3 high frequency irgb430ud2 n 500 ultra-fast 3 high frequency irgb440u n 500 ultra-fast 4 high frequency irgbc20k n 600 short circuit rated ultra-fast 2 high frequency irgbc20u n 600 ultra-fast 2 high frequency irgbc20kd2 n 600 short circuit rated ultra-fast 2 high frequency irgbc20ud2 n 600 ultra-fast 2 high frequency irgbc30k n 600 short circuit rated ultra-fast 3 high frequency irgbc30u n 600 ultra-fast 3 high frequency irgbc30kd2 n 600 short circuit rated ultra-fast 3 high frequency irgbc30ud2 n 600 ultra-fast 3 high frequency irgbc40k n 600 short circuit rated ultra-fast 4 high frequency irgbc40u n 600 ultra-fast 4 high frequency igbt / copack quarterly reliability report page 34 of 35
t0220 generation iv package part number channel voltage speed hex size frequency family irg4bc20s n 600 standard 2 low frequency irg4bc30s n 600 standard 3 low frequency irg4bc40s n 600 standard 4 low frequency irg4bc20f n 600 fast 2 mid frequency irg4bc20fd n 600 fast 2 mid frequency irg4bc30f n 600 fast 3 mid frequency irg4bc30fd n 600 fast 3 mid frequency irg4bc40f n 600 fast 4 mid frequency irg4bc20u n 600 ultra-fast 2 high frequency irg4bc20ud n 600 ultra-fast 2 high frequency irg4bc30u n 600 ultra-fast 3 high frequency irg4bc30ud n 600 ultra-fast 3 high frequency irg4bc30k n 600 short circuit rated ultra-fast 3 high frequency irg4bc40u n 600 ultra-fast 4 high frequency irg4bc40k n 600 short circuit rated ultra-fast 4 high frequency igbt / copack quarterly reliability report page 35 of 35

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